- Tytuł:
- High Resistivity GaN Single Crystalline Substrates
- Autorzy:
-
Porowski, S.
Boćkowski, M.
Łucznik, B.
Grzegory, I.
Wróblewski, M.
Teisseyre, H.
Leszczyński, M.
Litwin-Staszewska, E.
Suski, T.
Trautman, P.
Pakuła, K.
Baranowski, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1968415.pdf
- Data publikacji:
- 1997-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
72.80.Ey - Opis:
- High resistivity 10$\text{}^{4}$-10$\text{}^{6}$ Ω cm (300 K) GaN single crystals were obtained by solution growth under high N$\text{}_{2}$ pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 5; 958-962
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł