- Tytuł:
- Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition
- Autorzy:
-
Suchanek, B.
Palczewska, M.
Pakuła, K.
Baranowski, J.
Kamińska, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1968425.pdf
- Data publikacji:
- 1997-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.80.Ey
73.61.Ey - Opis:
- Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10$\text{}^{17}$ cm$\text{}^{-1}$ and mobility up to 500 cm$\text{}^{2}$/(V s) were achieved whereas hole concentration up to 7×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility about 16 cm$\text{}^{2}$/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g$\text{}_{⊥}$=1.9487 and g$\text{}_{∥}$=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 5; 1001-1004
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł