- Tytuł:
- Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
- Autorzy:
-
Korona, K. P.
Jasiński, J.
Kurpiewski, A.
Kamińska, M.
Jagadish, C.
Tan, H. H.
Krotkus, A.
Marcinkevicius, S. - Powiązania:
- https://bibliotekanauki.pl/articles/1951117.pdf
- Data publikacji:
- 1996-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Vv
72.20.Jv
72.80.Ey - Opis:
- Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10$\text{}^{14}$ to 5×10$\text{}^{16}$ cm$\text{}^{-2}$. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 4; 851-854
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł