Autor: Kamińska, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Model of Hopping between Deep Centers in Low Temperature GaAs
Autorzy:: Korona, K. P.
Kamińska, M.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/1872627.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.50.+t
72.80.Ey
Opis:: A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 337-340
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition
Autorzy:: Suchanek, B.
Palczewska, M.
Pakuła, K.
Baranowski, J.
Kamińska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1968425.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ey
73.61.Ey
Opis:: Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10$\text{}^{17}$ cm$\text{}^{-1}$ and mobility up to 500 cm$\text{}^{2}$/(V s) were achieved whereas hole concentration up to 7×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility about 16 cm$\text{}^{2}$/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g$\text{}_{⊥}$=1.9487 and g$\text{}_{∥}$=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 1001-1004
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Deep Defects in Low-Temperature GaAs
Autorzy:: Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.80.Ey
Opis:: Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: FFirst TSC and DLTS Measurements of Low Temperature GaAs
Autorzy:: Muszalski, J.
Babiński, A.
Korona, K. P.
Kamińska, E.
Piotrowska, A.
Kamińska, M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1891236.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.80.Ey
Opis:: The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 413-416
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
Autorzy:: Korona, K. P.
Jasiński, J.
Kurpiewski, A.
Kamińska, M.
Jagadish, C.
Tan, H. H.
Krotkus, A.
Marcinkevicius, S.
Powiązania:: https://bibliotekanauki.pl/articles/1951117.pdf
Data publikacji:: 1996-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
72.20.Jv
72.80.Ey
Opis:: Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10$\text{}^{14}$ to 5×10$\text{}^{16}$ cm$\text{}^{-2}$. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
Źródło:: Acta Physica Polonica A; 1996, 90, 4; 851-854
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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