- Tytuł:
- Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
- Autorzy:
-
Starikov, E.
Shiktorov, P.
Gružinskis, V.
Varani, L.
Vaissière, J. C.
Palermo, C.
Reggiani, L. - Powiązania:
- https://bibliotekanauki.pl/articles/2041806.pdf
- Data publikacji:
- 2005-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Ht
72.30.+q
72.70.+m - Opis:
- Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A$\text{}_{3}$B$\text{}_{5}$ compounds. This property is favorable for applications of nitrides in the THz frequency range.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 2; 408-411
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł