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Wyświetlanie 1-8 z 8
Tytuł:
Photovoltaic Effect and Space Charge Limited Current Analysis in $TlGaTe_2$ Crystals
Autorzy:
Qasrawi, A.
Yaseen, T.
Eghbariy, B.
Gasanly, N.
Powiązania:
https://bibliotekanauki.pl/articles/1419787.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
72.20.Ht
72.40.+w
Opis:
Anisotropic space charge limited current density analysis and photovoltaic effect in $TlGaTe_2$ single crystals has been investigated. It is shown that, above 330 K, the crystal exhibits intrinsic and extrinsic type of conductivity along (c-axis) and perpendicular (a-axis) to the crystal's axis, respectively. The current density (J) is found to be space charge limited. It is proportional to the square and three halves power of voltage (V) along the a- and c-axis, respectively. Along the a-axis and at sufficiently low electric field values, the activation energy of the current density is found to depend on the one half power of electric field. At high electric fields, the activation energy is field invariant. This behavior is found to be due to the Pool-Frenkel effect and due to a trap set located at 0.26 eV, respectively. Along the c-axis the crystal is observed to operate under the Child-Langmuir space charge limited regime. $TlGaTe_2$ crystals are found to exhibit photovoltaic properties. The open circuit photovoltage is recorded as a function of illumination intensity at room temperature.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 152-155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC
Autorzy:
Suproniuk, M.
Kamiński, P.
Kozłowski, R.
Pawłowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1364028.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
71.55.-i
72.20.-i
Opis:
A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the $Z_{1/2}$ center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1042-1048
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Characteristics of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ Heterostructure Photodiode
Autorzy:
Ahmetoglu, M.
Kucur, B.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1401231.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
73.40.Kp
72.40.+w
Opis:
In the present paper, electrical and optical properties of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1007-1009
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Semiconductor Materials for Ultrafast Photoswitches
Autorzy:
Coutaz, J.-L
Powiązania:
https://bibliotekanauki.pl/articles/2035566.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
85.60.Dw
72.20.-i
72.40.+w
72.80.Ey
42.65.Re
Opis:
This paper gives a review of semiconductor materials that are used to fabricate ultrafast photoswitches. The optoelectrical response of the switches is first described with simple models, from which the material requirements are deduced. The basic principles of the required material properties - ultrashort free carrier lifetime and high mobility, high dark resistivity, and high field breakdown - are explained. Then, the most popular ultrafast semiconductors are listed, together with their characteristics. A special emphasis is put on low-temperature grown GaAs. Finally, two applications of these ultrafast materials are presented, namely antennae for terahertz radiation and all-optical nonlinear devices.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 495-512
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Long-Lasting Current Transient Phenomena in TlBr
Autorzy:
Kažukauskas, V.
Ziminskij, A.
Vainorius, N.
Gostilo, V.
Shorohov, M.
Bozhko, V.
Powiązania:
https://bibliotekanauki.pl/articles/1506282.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.40.+w
72.60.+g
72.80.Jc
Opis:
The persistent conductivity effects in TlBr were evidenced at the temperatures below about 200 K after the intrinsic light excitation. They were associated with the filling of the trapping states having thermal activation energy of about 0.08-0.12 eV and accompanied by the appearance of the pronounced maximum of the thermally stimulated currents. In this state the enhanced photoconductivity was observed that could be thermally quenched above about 180 K. The quenching is initiated by the emptying of the trapping states having activation energy of 0.63-0.65 eV.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 268-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Excitation of Deep Defects by Intense Terahertz Radiation
Autorzy:
Ganichev, S. D.
Powiązania:
https://bibliotekanauki.pl/articles/2011109.pdf
Data publikacji:
1999-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Ht
72.40.+w
72.30.+q
Opis:
An analysis is done of the ionization of deep impurity centers by high-intensity terahertz radiation, with photon energies tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as direct tunneling and phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field of the radiation. Within a broad range of intensity, frequency, and temperature, the terahertz electric field of the radiation acts like a static field. For very high frequencies and low temperatures an enhancement of tunneling as compared to static fields was observed. The transition between the quasi-static and the high frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure.
Źródło:
Acta Physica Polonica A; 1999, 96, 5; 535-544
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoionization of Ge¯-DX State in GaAs
Autorzy:
Piotrzkowski, R.
Dmowski, L. H.
Powiązania:
https://bibliotekanauki.pl/articles/1968412.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.Mt
71.55.-i
72.40.+w
Opis:
We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 950-952
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Features of Energy Spectrum of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te Doped with V
Autorzy:
Artamkin, A. I.
Dobrovolsky, A. A.
Dziawa, P.
Story, T.
Slynko, E. I.
Slynko, V. E.
Ryabova, L. I.
Khokhlov, D. R.
Powiązania:
https://bibliotekanauki.pl/articles/2046904.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Nr
71.28.+d
71.55.-i
72.40.+w
Opis:
Recently new effects that are not characteristic of undoped lead telluride, such as the Fermi level pinning, giant negative magnetoresistance, were observed in Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te alloys doped with transition and rare earth elements - Cr, Mo, Yb. We have studied transport and magnetic properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te doped with another transition element - vanadium. A series of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te(V) samples of different composition and degree of doping was investigated. It was observed that the resistivity demonstrates activation behavior at low temperatures for the samples with considerable amount of vanadium as well as for the samples without vanadium. The activation energy is proportional to the Mn content. In some of the samples, photoconductivity was observed at low temperatures. The results are discussed in terms of a model assuming formation of the impurity level by the vanadium impurity and the effect of the Fermi level pinning by this level.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 151-156
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-8 z 8

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