Wszystkie pola: 42.40.-i - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Anizotropy of Photoconductivity in BiOCl (X=Cl, Br, I) Single Crystals
Autorzy:: Komanicky, V.
Bunda, S.
Botko, M.
Bunda, V.
Powiązania:: https://bibliotekanauki.pl/articles/1368699.pdf
Data publikacji:: 2014-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.25.Ja
42.70.Qs
72.40.+w
Opis:: Oxyhalides of bismuth BiOX (X = Cl, Br, I) are very interesting materials which find various applications as X-ray luminescent screens, as anti-Stokes converters, photocatalyst, usual luminophors and as photoconductive analyzer of linear polarized radiation in the 0.24 - 1.2 μm spectral region. The great interest for these materials is strongly related to the influence of dimensionality on the behaviour of physical properties (they are 2D structured materials). Bismuth oxyhalides are one of the V-VI-VII group compound semiconductors belonging to the tetragonal system. The structure of BiOX is known to have a layered structure, which is constructed by the combination of the halide ion layer and the bismuth oxygen layer. We present results of the study of photoconductivity spectra anisotropy of the BiOX single crystals.
Źródło:: Acta Physica Polonica A; 2014, 126, 1; 274-275
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Semiconductor Materials for Ultrafast Photoswitches
Autorzy:: Coutaz, J.-L
Powiązania:: https://bibliotekanauki.pl/articles/2035566.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.60.-q
85.60.Dw
72.20.-i
72.40.+w
72.80.Ey
42.65.Re
Opis:: This paper gives a review of semiconductor materials that are used to fabricate ultrafast photoswitches. The optoelectrical response of the switches is first described with simple models, from which the material requirements are deduced. The basic principles of the required material properties - ultrashort free carrier lifetime and high mobility, high dark resistivity, and high field breakdown - are explained. Then, the most popular ultrafast semiconductors are listed, together with their characteristics. A special emphasis is put on low-temperature grown GaAs. Finally, two applications of these ultrafast materials are presented, namely antennae for terahertz radiation and all-optical nonlinear devices.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 495-512
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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