- Tytuł:
- Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques
- Autorzy:
-
Juršėnas, S.
Miasojedovas, S.
Kurilčik, G.
Žukauskas, A.
Aleksiejūnas, R.
Malinauskas, T.
Sūdžius, M.
Jarašiūnas, K. - Powiązania:
- https://bibliotekanauki.pl/articles/2041739.pdf
- Data publikacji:
- 2005-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.80.Ey
72.20.Jv
78.55.Cr - Opis:
- Time-resolved photoluminescence and four-wave mixing techniques have been combined for studies of carrier relaxation dynamics in a highly photoexcited GaN epilayer. For a moderate excitation density below 1 mJ/cm$\text{}^{2}$, carrier recombination was due to free carrier capture by deep traps. The characteristic time of carrier capture,τ$\text{}_{e}$=550 ps, was measured under deep trap saturation regime. The ambipolar diffusion coefficient for free carriers, D=1.7 cm$\text{}^{2}$/s, was estimated from the analysis of the transients of the light-induced gratings of various periods. A complete saturation of the four-wave mixing efficiency was observed for the excitation energy density exceeding 1.5 mJ/cm$\text{}^{2}$. The latter saturation effect was shown to be related to electron-hole plasma degeneration, which results in a significant enhancement of carrier recombination rate due to onset of stimulated emission.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 2; 240-244
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł