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Wyszukujesz frazę "71.55.Ht" wg kryterium: Temat

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    Wyświetlanie 1-5 z 5
    Tytuł:
    High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP
    Autorzy:
    Subačius, L.
    Kašalynas, I.
    Vingelis, M.
    Aleksiejūnas, R.
    Jarašiūnas, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1179495.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Ht
    Opis:
    We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semi-insulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 280-285
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector
    Autorzy:
    Yűcel Kurt, H.
    Salamov, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812045.pdf
    Data publikacji:
    2008-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Ht
    Opis:
    In a semiconductor gas discharge structure with diameters much larger than an inter-electrode distance, the effects of different parameters (i.e. electrode separation, gas pressure, diameter of the GaAs photodetector, etc.) on electrical breakdown and current oscillations were studied. Non-stationary and non-homogeneous states are generated in the structure, through the spatially uniform irradiation of the semiconductor photodetector. Instabilities occur due to the nonlinear features of the semiconductor photocathode, while the gas discharge serves to visualize transport processes in GaAs. Spatiotemporal variations of current and discharge light emissions are studied with the above-mentioned control parameters. Transformation of the profile and amplitude of the current densities of the filaments in different regions of the current-voltage characteristic are widely studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values are observed. A semiconductor gas discharge structure with an N-shaped current-voltage characteristic is analyzed via both the current and discharge light emissions data which shows the electrical instability in the GaAs photodetector.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 4; 819-834
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating
    Autorzy:
    Subačius, L.
    Kašalynas, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1179478.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Ht
    Opis:
    Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 275-279
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Field Induced Localization in Semiinsulating GaAs
    Autorzy:
    Łusakowski, J.
    Merten, R.
    Grynberg, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920957.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Jv
    72.15.Gd
    72.20.Ht
    Opis:
    Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium temperature in magnetic field up to 6 T. During the measurements the samples were persistently illuminated with infrared light which allowed to populate with electrons a part of shallow donor and conduction band states. Current-voltage characteristics showed an abrupt jump of the current at a threshold electric field which is interpreted as a result of impact ionization of electrons bound on shallow donors and in the tail of the bottom of the conduction band. The jump of the current decreases as the magnetic field increases and disappears for a sufficiently high magnetic field B$\text{}_{0}$. The value of B$\text{}_{0}$ grows with growing light intensity. These results are explained by magnetic-field induced localization of electrons on long-range fluctuations of the electrostatic potential. The localization transition was confirmed by the current dependence on temperature measured at different magnetic fields. A peak on these curves was observed. Its position coincides with the temperature above which impact ionization is not observed. A possible mechanism explaining appearance of the peak is presented.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 551-560
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitation of Deep Defects by Intense Terahertz Radiation
    Autorzy:
    Ganichev, S. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011109.pdf
    Data publikacji:
    1999-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Ht
    72.40.+w
    72.30.+q
    Opis:
    An analysis is done of the ionization of deep impurity centers by high-intensity terahertz radiation, with photon energies tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as direct tunneling and phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field of the radiation. Within a broad range of intensity, frequency, and temperature, the terahertz electric field of the radiation acts like a static field. For very high frequencies and low temperatures an enhancement of tunneling as compared to static fields was observed. The transition between the quasi-static and the high frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 5; 535-544
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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