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Wyszukujesz frazę "Lusakowski, J." wg kryterium: Wszystkie pola

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Nonlinear Coupling of Oscillatory Modes in Current Flow in Semi-Insulating GaAs
    Autorzy:
    Karpińska, K.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891273.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    Opis:
    Spontaneous current oscillations in semi-insulating (SI) GaAs sample caused by high electric field domains nucleation were perturbed by modulated illumination. Coupling between domain and photocurrent oscillations leads to quasiperiodic and frequency-locked behaviour. The observed Arnol'd tongues structure follows the Farey tree ordering and agrees with predictions of the circle map theory. We also suggest a possible mechanism responsible for the coupling of the modes.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 425-428
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
    Autorzy:
    Wysmołek, A.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932094.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    72.20.Ht
    Opis:
    Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 261-264
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fractal Dimensions from Chaotic Oscillations in Semi-Insulating GaAs
    Autorzy:
    Zduniak, A.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929673.pdf
    Data publikacji:
    1993-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    05.45.+b
    72.20.Ht
    Opis:
    Relaxation and domain current oscillations in undoped semi-insulating GaAs were observed at room temperature for a broad range of voltage applied to a sample. The oscillations were characterized by a reconstruction of an attractor of the system. An analysis of the attractor helped to discriminate between the two likes of oscillations. A transition from one like of oscillations to the other was connected with a chaotization of the current. A chaotic state of the system was analyzed by calculations of fractal dimensions D$\text{}_{q}$ for -0.6 < g < 40 and the f(α) function.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 3; 575-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
    Autorzy:
    Zduniak, A.
    Łusakowski, J.
    Nowak, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923732.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    Opis:
    Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10$\text{}^{-13}$ cm$\text{}^{2}$ which agrees with literature data.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 777-780
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields
    Autorzy:
    Łusakowski, J.
    Grynberg, M.
    Huant, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1876263.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Hy
    72.20.Ht
    Opis:
    Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 482-486
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Field Induced Localization in Semiinsulating GaAs
    Autorzy:
    Łusakowski, J.
    Merten, R.
    Grynberg, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920957.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Jv
    72.15.Gd
    72.20.Ht
    Opis:
    Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium temperature in magnetic field up to 6 T. During the measurements the samples were persistently illuminated with infrared light which allowed to populate with electrons a part of shallow donor and conduction band states. Current-voltage characteristics showed an abrupt jump of the current at a threshold electric field which is interpreted as a result of impact ionization of electrons bound on shallow donors and in the tail of the bottom of the conduction band. The jump of the current decreases as the magnetic field increases and disappears for a sufficiently high magnetic field B$\text{}_{0}$. The value of B$\text{}_{0}$ grows with growing light intensity. These results are explained by magnetic-field induced localization of electrons on long-range fluctuations of the electrostatic potential. The localization transition was confirmed by the current dependence on temperature measured at different magnetic fields. A peak on these curves was observed. Its position coincides with the temperature above which impact ionization is not observed. A possible mechanism explaining appearance of the peak is presented.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 551-560
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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