- Tytuł:
- 35×4 Substates of DX Centers in AlGaAs:Si
- Autorzy:
-
Ostermayer, G.
Brunthaler, G.
Stöger, G.
Jantsch, W.
Wilamowski, Z. - Powiązania:
- https://bibliotekanauki.pl/articles/1929749.pdf
- Data publikacji:
- 1993-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
72.80.Ey - Opis:
- The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E$\text{}_{B}$ for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.
- Źródło:
-
Acta Physica Polonica A; 1993, 84, 4; 765-768
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł