Autor: Sadowski, L. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Experimental Evidence for the Spatial Correlation of Charged EL2(+) Defects and Acceptors in Semi-insulating GaAs
Autorzy:: Sadowski, M. L.
Grynberg, M.
Powiązania:: https://bibliotekanauki.pl/articles/1931911.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.50.+p
78.50.Ge
71.55.Eq
Opis:: The far-infrared photoconductivity due to shallow donors was measured in semi-insulating GaAs for different states of the EL2 defect - normal, metastable, and during the transition - with and without hydrostatic pressure. The results show that the intra-donor transition line broadening observed previously after transferring the EL2 to the metastable configuration cannot be due to lattice distortion effects, and can only be explained in terms of a spatial correlation of charged EL2(+) and acceptor A(-) states, which form electric dipoles.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 133-136
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: MBE Growth and Properties of GaMnAs(100) Films
Autorzy:: Sadowski, J.
Domagała, J.
Bąk- Misiuk, J.
Świątek, K.
Kanski, J.
Ilver, L.
Oscarsson, H.
Powiązania:: https://bibliotekanauki.pl/articles/1992165.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Hi
79.60.Bm
71.55.Eq
Opis:: We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 509-513
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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