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    Wyświetlanie 1-6 z 6
    Tytuł:
    High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP
    Autorzy:
    Subačius, L.
    Kašalynas, I.
    Vingelis, M.
    Aleksiejūnas, R.
    Jarašiūnas, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1179495.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Ht
    Opis:
    We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semi-insulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 280-285
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Calorimetric Absorption Spectroscopy of Deep Defects and Quantum Dots
    Autorzy:
    Heitz, R.
    Podlowski, L.
    Böhrer, J.
    Hoffmann, A.
    Broser, I.
    Bimberg, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933692.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    73.20.Dx
    71.70.Gm
    Opis:
    In recent years calorimetric absorption spectroscopy has been developed to a powerful tool of semiconductor spectroscopy based on the detection of nonradiative relaxation processes. Calorimetric absorption spectroscopy is an ultrasensitive quantitative absorption technique. Recent investigations of Fe in III-V semiconductors and of InAs/GaAs quantum dots are presented here to illustrate the potential of the method. Sharp absorption lines are observed at the low energy onset of the Fe $\text{}^{3+}\text{}^{/}\text{}^{2+}$ charge transfer band in III-V semiconductors. Calorimetric absorption spectroscopy measurements in the mK range reveal a strong temperature dependence of their absorption strength identifying unambiguously Fe$\text{}^{3+}$($\text{}^{6}$A$\text{}_{1}$(S)) as a ground state. The excited state is attributed to (Fe$\text{}^{2+}$,h). The importance of exchange interaction for the observed fine structure is pointed out and binding energies are determined. The quantum yield of the intracenter $\text{}^{5}$Τ$\text{}_{2}$-$\text{}^{5}$E transition of F$\text{}^{2+}$ is determined to be below 50% at 2 K. A correlation between the nonradiative relaxation rate and the isotope splitting of the $\text{}^{5}$Τ$\text{}_{2}$-$\text{}^{5}$E transition is observed, demonstrating the crucial role of the dynamical Jahn-Teller coupling of the $\text{}^{5}$Τ$\text{}_{2}$ state to local Τ$\text{}_{2}$ modes for the multiphonon relaxation process. Quantum dots having a d-function density of states should exhibit no Stokes shift between absorption and emission as observed for one- and two-dimensional systems. Calorimetric absorption spectroscopy demonstrates ground state absorption coinciding in energy with the luminescence for self- organized InAs/GaAs quantum dot structures grown by MBE. Transitions into excited hole states are resolved and a comparison to photoluminescence excitation spectroscopy is presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 619-630
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electronic Band Structure of In$\text{}_{x}$Ga$\text{}_{1-x}$N under Pressure
    Autorzy:
    Gorczyca, I.
    Christensen, N. E.
    Svane, A.
    Laaksonen, K.
    Nieminen, R. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047377.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.15.Mb
    71.55.Eq
    71.20.-b
    Opis:
    The electronic band structures of zinc-blende In$\text{}_{x}$Ga$\text{}_{1-x}$N alloys with x varying from 0.03 to 0.5 are examined within the density functional theory. The calculations, including structural optimizations, are performed by means of the full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of varying the composition, x, and of applying external pressure are studied. A composition-dependent band gap bowing parameter in the range of 1.6-2 eV is obtained. A strong nonlinearity in the composition dependence of the pressure coefficient of the band gap is found.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 203-208
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaNDOI
    Autorzy:
    Godlewski, M.
    Suski, T.
    Grzegory, I.
    Porowski, S.
    Langer, R.
    Barski, A.
    Bergman, J. P.
    Monemar, B.
    Goldys, E. M.
    Phillips, M. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969079.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.Ch
    61.72.Ff
    71.55.Eq
    Opis:
    The origin of two "deep" photoluminescence (PL) emissions observed in wurtzite (yellow PL) and cubic (red PL) GaN is discussed. PL and time-resolved PL studies confirm donor-acceptor pair character of the yellow band in wurtzite GaN and point to participation of shallow donors in this emission. A similar PL mechanism is proposed for the red emission of cubic GaN. We further show a puzzling property of both yellow and red PLs. Both yellow and red emissions show spatial homogeneity and are only weakly dependent on surface morphology.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 326-330
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High temperature stability of electrical and optical properties of bulk GaN:Mg grown by HNPS method in different crystallographic directions
    Autorzy:
    Sadovyi, B.
    Amilusik, M.
    Staszczak, G.
    Bockowski, M.
    Grzegory, I.
    Porowski, S.
    Konczewicz, L.
    Tsybulskyi, V.
    Panasyuk, M.
    Rudyk, V.
    Karbovnyk, I.
    Kapustianyk, V.
    Litwin-Staszewska, E.
    Piotrzkowski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1159722.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.80.Ey
    Opis:
    Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-126-A-128
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Coupling of LO Phonons to Excitons in GaN
    Autorzy:
    Wysmołek, A.
    Łomiak, P.
    Baranowski, J. M.
    Pakuła, K.
    Stępniewski, R.
    Korona, K. P.
    Grzegory, I.
    Boćkowski, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952430.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    63.20.Mt
    71.55.Eq
    Opis:
    The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 981-984
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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