- Tytuł:
- Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
- Autorzy:
-
Śliwiński, A. A.
Korona, K. P.
Pakuła, K.
Baranowski, J. M. - Powiązania:
- https://bibliotekanauki.pl/articles/1952204.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
73.61.Ey - Opis:
- The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 955-958
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł