Autor: Chen, W.M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Optically Detected Magnetic Resonance Studies of Te-Related Shallow Donors in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:: Godlewski, M.
Fronc, K.
Chen, W. M.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1890838.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
72.20.Jv
76.70.Hb
78.55.Cr
Opis:: The first studies of the Optically Detected Magnetic Resonance (ODMR) of Te-doped (x = 0.42) are presented. The ODMR data indicate an efficient energy transfer between epilayer and GaAs substrate.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 341-344
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Defects in Dilute Nitrides
Autorzy:: Chen, W. M.
Buyanova, I. A.
Tu, C. W.
Yonezu, H.
Powiązania:: https://bibliotekanauki.pl/articles/2043705.pdf
Data publikacji:: 2005-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ji
71.55.Eq
76.70.Hb
Opis:: We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As$\text{}_{a}$ antisites and Ga$\text{}_{i}$ self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.
Źródło:: Acta Physica Polonica A; 2005, 108, 4; 571-579
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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