Temat: 68.55.Ln - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Iron-Boron Pair in Silicon: Old Problem Anew
Autorzy:: Dobaczewski, L.
Surma, M.
Powiązania:: https://bibliotekanauki.pl/articles/1946552.pdf
Data publikacji:: 1996-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
71.55.Cn
73.40.Lq
Opis:: For the iron-boron pair in the p-type silicon two different configurations of the defect are observed: stable and metastable. The reported metastable configuration is the first step in a dissociation process of the stable, i.e. of trigonal symmetry, configuration of the pair. Rate equations for the two-step iron-boron pair dissociation allowed us to evaluate the dissociation rates for both configurations of the pair. The driving force for the creation and, then, dissociation of the metastable pair is the minority carrier injection followed by the electron-hole recombination process in the space charge region. A use of the high-resolution Laplace-transform deep level transient spectroscopy allowed us to demonstrate for both of the configurations the influence of the magnetic field on the hole emission.
Źródło:: Acta Physica Polonica A; 1996, 90, 4; 613-622
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy
Autorzy:: Dobaczewski, L.
Kamiński, P.
Kozłowski, R.
Surma, M.
Powiązania:: https://bibliotekanauki.pl/articles/1933733.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Lq
71.55.Cn
68.55.Ln
Opis:: High-resolution Laplace-transform deep level transient spectroscopy technique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 703-706
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Single Temperature Scan Determination of Defect Parameters in DLTS Experiment
Autorzy:: Dobaczewski, L.
Kancleris, Z.
Bonde Nielsen, K.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1968023.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Lq
71.55.Cn
68.55.Ln
Opis:: Many point and extended defects in silicon, and other semiconducting materials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission from the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to the technique, in which after a single temperature scan the complete Arrhenius plot can be constructed for defects present in the sample with considerable concentrations. This method is much faster, accurate, and offers a much higher resolution in comparison with the standard DLTS method.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 724-726
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Hydrogen and its Complexes in Silicon
Autorzy:: Dobaczewski, L.
Bonde Nielsen, K.
Gosciński, K.
Andersen, O.
Powiązania:: https://bibliotekanauki.pl/articles/2014151.pdf
Data publikacji:: 2000-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Lq
71.55.Cn
68.55.Ln
Opis:: In this study the technique of Laplace transform (high resolution) deep level transient spectroscopy combined with the uniaxial stress method has been used to study a symmetry and the defect reconfiguration kinetics (the stress induced alignment) of some forms of hydrogen-related centres. We have confirmed the trigonal symmetry of the defect related to the isolated bond centred hydrogen. When hydrogen decorates the vacancy-oxygen pair (the A centre) the apparent defect orthorhombic symmetry is not lowered as a result of a very high hydrogen jumping rate between two unsaturated broken bonds of the vacancy. We also show that the stress-induced defect alignment in some cases can be related to the same microscopic mechanism of the hydrogen motion as it is for the diffusion process.
Źródło:: Acta Physica Polonica A; 2000, 98, 3; 231-239
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys
Autorzy:: Dobaczewski, L.
Bonde Nielsen, K.
Nylandsted Larsen, A.
Lundsgaard Hansen, J.
Gościński, K.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1969056.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
71.55.Cn
73.40.Lq
Opis:: In this report we present high-resolution spectra obtained with a use of the Laplace transform deep level transient spectroscopy for platinum diffused into dilute (0-5% of Ge) SiGe alloys. Very significant changes are observed in the spectra associated with the transition metals as the germanium content is altered. We interpret these spectra in terms of the configurations of silicon and germanium atoms surrounding the transition metal. In order to explain the observed behaviour both the first and second nearest neighbour shells are considered.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 297-299
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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