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    Wyświetlanie 1-8 z 8
    Tytuł:
    Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
    Autorzy:
    Bożek, R.
    Korona, K. P.
    Nowak, G.
    Wasik, D.
    Słupiński, T.
    Kaczor, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929707.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    78.55.-m
    78.20.Jq
    Opis:
    GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 669-672
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Kinetics of YAG Crystals Activated with Ce, and Ce and Mg
    Autorzy:
    Barzowska, J.
    Kubicki, A.
    Grinberg, M.
    Kaczmarek, S.
    Łuczyński, Z.
    Wojtowicz, A. J.
    Koepke, Cz.
    Powiązania:
    https://bibliotekanauki.pl/articles/1995826.pdf
    Data publikacji:
    1999-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    78.47.+p
    78.55.-m
    Opis:
    A basic spectroscopic measurements of luminescence, absorption, luminescence excitation spectra and emission kinetic measurements on YAG crystals activated with cerium and magnesium are presented. We report that the Ce$\text{}^{3+}$ luminescence decay constant, at 65 ns, is independent of Ce concentrations (from 0.05 to 0.2%) and that it does not change with the presence or absence of the Mg co-dopant. Nevertheless, we find that under pulsed laser excitation at 290 nm the rise time in Ce luminescence time profiles is effectively shorter in the Mg co-doped samples.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 3; 395-402
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Radiative Donor-Acceptor Pair Recombination in $Tl_2Ga_2Se_3S$ Layered Single Crystals
    Autorzy:
    Gasanly, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400493.pdf
    Data publikacji:
    2013-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.20.-e
    71.55.-i
    Opis:
    The emission band spectra of $Tl_2Ga_2Se_3S$ layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW $cm^{-2}$ range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from the moderately deep donor level $E_{d}$=270 meV to the shallow acceptor level $E_{a}$=10 meV were suggested to be responsible for the observed photoluminescence band.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 1; 128-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Rare Earth Centres in Mixed Compound Crystals
    Autorzy:
    Kozanecki, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945470.pdf
    Data publikacji:
    1996-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    78.55.-m
    78.50.Ge
    Opis:
    A review of the Yb impurity related centres in mixed InP-based crystals has been presented. It is shown that Yb$\text{}^{3+}$ ions can be utilized to probe alloy disorder, both in cationic (GaInP) and anionic (InPAs) alloys. The existence of alloy disorder manifested itself in the photoluminescence spectra reflecting local atomic structure of the Yb centres. The dominant emissions have been ascribed to the Yb-P$\text{}_{4}$Ga$\text{}_{12}$ and Yb-P$\text{}_{4}$-Ga$\text{}_{11}$In complexes in GaInP and to Yb-P$\text{}_{4}$ and Yb-P$\text{}_{3}$As centres in InPAs. The excitation and relaxation mechanisms of the 4f-shell of Yb$\text{}^{3+}$ ions were also investigated. It was found that the temperature quenching of the Yb$\text{}^{3+}$ luminescence was accompanied with the appearance of two thermally activated photoluminescence bands. It is suggested that photoluminescence at an energy of 25 meV below the energy gap is due to recombination of excitons bound at Yb-related centres. Relaxation of the excited 4f-shell of Yb$\text{}^{3+}$ ions proceeds via back transfer of the excitation energy from the 4f-shell to excitons bound at Yb-centres.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 1; 73-82
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Infrared Luminescence in Er and Er+O Implanted 6H SiC
    Autorzy:
    Kozanecki, A.
    Jantsch, W.
    Heis, W.
    Prechtl, G.
    Sealy, B. J.
    Jeynes, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968292.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ww
    71.55.-i
    78.55.-m
    Opis:
    Photoluminescence in the neighbourhood of 1.54 μm due to the $\text{}^{4}$I$\text{}_{13}\text{}_{/}\text{}_{2}$ -$\text{}^{4}$I$\text{}_{15}\text{}_{/}\text{}_{2}$ intra-4f-shell transitions of Er$\text{}^{3+}$ ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 879-882
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Energy Level Scheme of Nd$\text{}^{3+}$ Ion in Rare Earth Oxyhalides, REOX (X = F, Cl, and Br)
    Autorzy:
    Beaury, L.
    Hölsä, J.
    Korventausta, J.
    Krupa, J.-C.
    Lamminmäki, R.-J.
    Porcher, P.
    Rahiala, H.
    Säilynoja, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952823.pdf
    Data publikacji:
    1996-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    71.70.Ch
    78.40.-q
    78.55.-m
    Opis:
    The energy level schemes of the neodymium oxyhalides (NdOX, X = F, Cl, and Br) were studied and simulated with a phenomenological model accounting simultaneously for both the free ion interactions and the crystal field effect. The former included the electrostatic and interconfigurational interactions as well as the spin-orbit coupling. The simulations were carried out by using the data from the optical absorption and luminescence as well as the inelastic neutron scattering measured at low temperatures between 2.5 and 77 K. The values of the Slater integral F$\text{}^{2}$ describing the electrostatic interactions decrease while F$\text{}^{4}$ and F$\text{}^{6}$ increase as a function of the ionic radius of the halide anion. The strength of the spin-orbit coupling is quite the same in all three matrices. The crystal field effect - measured as the crystal field strength parameter S - is almost twice as strong in the hexagonal NdOF matrix (650 cm$\text{}^{-1}$) than in the tetragonal NdOCI or NdOBr (367 and 378 cm$\text{}^{-1}$, respectively). Similar evolution was obtained for the short-and mid-range crystal field strengths related to the spatial extension of the interaction.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 6; 1203-1213
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN
    Autorzy:
    Matys, M.
    Miczek, M.
    Adamowicz, B.
    Żytkiewicz, Z.
    Kamińska, E.
    Piotrowska, A.
    Hashizume, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492736.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    71.35.-y
    73.20.-r
    71.55.-i
    02.70.Dh
    Opis:
    The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from $10^{15}$ to $10^{19}$ photon $cm^{-2} s^{-1}$) for n-GaN samples with various surface passivating layers $(Al_2O_3, SiO_2)$.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-073-A-075
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    FIR Magnetooptical Measurements on MOCVD Grown InAs
    Autorzy:
    Andrearczyk, T.
    Karpierz, K.
    Bożek, R.
    Stępniewski, R.
    Grynberg, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968009.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.-m
    71.55.-i
    72.40.+w
    Opis:
    In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 699-703
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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