Temat: 71.55.Ht - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Magneto-Luminescence Study of Silicon-Vacancy in 6HSi
Autorzy:: Wysmołek, A.
Wardak, K.
Stępniewski, R.
Baranowski, J.
Potemski, M.
Tymicki, E.
Grasza, K.
Powiązania:: https://bibliotekanauki.pl/articles/2047066.pdf
Data publikacji:: 2006-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Hx
71.55.-i
71.55.Ht
Opis:: The magneto-spectroscopy studies of luminescence related to silicon-vacancy, in high quality 6H-SiC crystals grown by the seeded physical vapor transport method, are presented. The superior optical quality of these crystals allowed us to resolve a doublet structure of the 1.398 eV emission line (V$\text{}_{2}$ line), commonly assigned to the transitions involving two singlet states of the silicon-vacancy. Experiments performed in magnetic fields up to 20 T showed that each doublet constituent of the V$\text{}_{2}$ line splits into four components for the magnetic field parallel to the c-axis of the 6H-SiC crystals. This result could be hardly explained in terms of a singlet to singlet transition. The analysis of the angle-resolved luminescence experiments in high magnetic fields serves us to discuss the symmetry of the defect states responsible for the V$\text{}_{2}$-line in silicon carbide.
Źródło:: Acta Physica Polonica A; 2006, 110, 3; 437-442
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Excitation of Deep Defects by Intense Terahertz Radiation
Autorzy:: Ganichev, S. D.
Powiązania:: https://bibliotekanauki.pl/articles/2011109.pdf
Data publikacji:: 1999-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.20.Ht
72.40.+w
72.30.+q
Opis:: An analysis is done of the ionization of deep impurity centers by high-intensity terahertz radiation, with photon energies tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as direct tunneling and phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field of the radiation. Within a broad range of intensity, frequency, and temperature, the terahertz electric field of the radiation acts like a static field. For very high frequencies and low temperatures an enhancement of tunneling as compared to static fields was observed. The transition between the quasi-static and the high frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure.
Źródło:: Acta Physica Polonica A; 1999, 96, 5; 535-544
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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