- Tytuł:
- Photoionization of Ge¯-DX State in GaAs
- Autorzy:
-
Piotrzkowski, R.
Dmowski, L. H. - Powiązania:
- https://bibliotekanauki.pl/articles/1968412.pdf
- Data publikacji:
- 1997-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
63.20.Mt
71.55.-i
72.40.+w - Opis:
- We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 5; 950-952
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł