Autor: Słupinski, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs
Autorzy:: Słupiński, T.
Zielińska-Rohozińska, E.
Powiązania:: https://bibliotekanauki.pl/articles/1968417.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.-y
71.55.-i
61.10.-i
Opis:: Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 971-975
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
Autorzy:: Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.
Powiązania:: https://bibliotekanauki.pl/articles/1929707.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
78.55.-m
78.20.Jq
Opis:: GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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