Autor: Bożek, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: FIR Magnetooptical Measurements on MOCVD Grown InAs
Autorzy:: Andrearczyk, T.
Karpierz, K.
Bożek, R.
Stępniewski, R.
Grynberg, M.
Powiązania:: https://bibliotekanauki.pl/articles/1968009.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.-m
71.55.-i
72.40.+w
Opis:: In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 699-703
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
Autorzy:: Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.
Powiązania:: https://bibliotekanauki.pl/articles/1929707.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
78.55.-m
78.20.Jq
Opis:: GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
Autorzy:: Dwiliński, R.
Palczewska, M.
Kaczor, P.
Korona, K.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1920972.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
78.50.Ge
76.30.Mi
Opis:: The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 613-616
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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