- Tytuł:
- Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
- Autorzy:
-
Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P. - Powiązania:
- https://bibliotekanauki.pl/articles/1929707.pdf
- Data publikacji:
- 1993-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.-i
78.55.-m
78.20.Jq - Opis:
- GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
- Źródło:
-
Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł