Autor: Sęk, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Controlling the biexciton-exciton cascade kinetics in a quantum dot via coupling to a microcavity optical mode
Autorzy:: Sęk, G.
Krizhanovskii, D.
Kulakovskii, V.
Reitzenstein, S.
Kamp, M.
Powiązania:: https://bibliotekanauki.pl/articles/1160147.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
71.35.-y
78.55.-m
42.50.Pq
Opis:: The luminescence of single and two exciton states in a quantum dot embedded in the active layer of a micropillar cavity has been investigated. Temperature tuning has been used to bring the energy states of the quantum dot and the cavity into resonance. Studying the resonance behavior of the exciton and biexciton transitions with cavity mode revealed a similar Purcell effect for both lines. The cavity-induced changes of the respective radiative lifetimes have been shown to allow for controlling the ratio between the single and two exciton occupation and their relative emission rates in a single quantum dot.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-44-A-47
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure
Autorzy:: Pieczarka, M.
Maryński, A.
Podemski, P.
Misiewicz, J.
Spencer, P.
Murray, R.
Sęk, G.
Powiązania:: https://bibliotekanauki.pl/articles/1185237.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
71.35.-y
78.55.-m
Opis:: We investigate double layer InAs/GaAs quantum dots grown in the Stransky-Krastanov mode by molecular beam epitaxy. The sample consists of two layers of InAs quantum dots separated by 10 nm thick GaAs layer, where the top quantum dot layer of an improved homogeneity is covered by an InGaAs cap. This configuration has allowed for the extension of the dots' emission to longer wavelengths. We probed the carrier transfer between the states confined in a double quantum well composed of InGaAs cap and the quantum dots wetting layer to the states in the quantum dots by means of photoluminescence excitation and photoreflectance spectroscopies. Efficient emission from quantum dots excited at the double quantum well ground state energy was observed. There is also presented a discussion on the carrier injection efficiency from the capping layer to the quantum dots.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-59-A-61
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Effect of dielectric medium anisotropy on the polarization degree of emission from a single quantum dash
Autorzy:: Mrowiński, P.
Tarnowski, K.
Olszewski, J.
Somers, A.
Kamp, M.
Höfling, S.
Reithmaier, J.
Urbańczyk, W.
Misiewicz, J.
Machnikowski, P.
Sęk, G.
Powiązania:: https://bibliotekanauki.pl/articles/1159588.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
71.35.-y
78.55.-m
Opis:: Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-48-A-52
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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