Temat: Qt - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Growth and Investigation of Heterostructures Based on Multiferroic $BiFeO_3$
Autorzy:: Vengalis, B.
Devenson, J.
Oginskis, A.
Butkutė, R.
Maneikis, A.
Steikūnienė, A.
Dapkus, L.
Banys, J.
Kinka, M.
Powiązania:: https://bibliotekanauki.pl/articles/1813484.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.30.+h
73.43.Qt
75.47.Lx
Opis:: We report heteroepitaxial growth of multiferroic $BiFeO_3$ thin films by RF magnetron sputtering on lattice-matched $SrTiO_3$ substrates, as well as preparation and electrical properties of the heterostructures formed by growing $BiFeO_3$ thin films on highly conductive $LaNiO_3$ films and n-Si substrates. Nonlinear and rectifying current-voltage (I-U) characteristics were revealed for the heterojunctions in a wide temperature range (T=78-300 K).
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1095-1098
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electron-Electron Interaction Effects in Quantum Hall Regime of GaN/AlGaN Heterostructures
Autorzy:: Siekacz, M.
Dybko, K.
Maude, D.
Potemski, M.
Knap, W.
Skierbiszewski, C.
Powiązania:: https://bibliotekanauki.pl/articles/2047676.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.30.+h
73.40.-c
73.43.Qt
Opis:: We measured the activation of resistivity at quantum Hall minima in high mobility two-dimensional electron gas confined at AlGaN/GaN interface. The effective g-factor and effective mass was deduced. The electron-electron interactions modify both quantities compared to their bare band values. It is found that the influence of interactions is much more pronounced onto g-factor than effective mass. The relative spin susceptibility was also calculated and compared with available theories. The best agreement was found with the ideal two-dimensional gas model in random phase approximation.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 269-273
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Growth and Investigation of $p-La_{2//3}Ca_{1//3}MnO_3$/n-Si Heterostructures
Autorzy:: Anisimovas, F.
Butkutė, R.
Devenson, J.
Maneikis, A.
Stankevič, V.
Pyragas, V.
Vengalis, B.
Powiązania:: https://bibliotekanauki.pl/articles/1813391.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.30.+h
73.43.Qt
75.47.Lx
81.15.Fg
Opis:: We report the fabrication and investigation of p-n diode structures based on thin hole-doped $La_{2//3}Ca_{1//3}MnO_3$ films grown on n-type silicon substrates. $La_{2//3}Ca_{1//3}MnO_3$ films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of $La_{2//3}Ca_{1//3}MnO_3$ thin films on Si substrates. The surface roughness of $La_{2//3}Ca_{1//3}MnO_3$ films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that $La_{2//3}Ca_{1//3}MnO_3$/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 997-1000
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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