- Tytuł:
- Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique
- Autorzy:
-
Gelczuk, L.
Dąbrowska-Szata, M.
Jóźwiak, G.
Radziewicz, D. - Powiązania:
- https://bibliotekanauki.pl/articles/2038268.pdf
- Data publikacji:
- 2004-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.-i
71.55.Eq
71.20.Nr - Opis:
- Two deep traps associated with lattice-mismatch induced defects in n-type In$\text{}_{0.042}$Ga$\text{}_{0.958}$As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.
- Źródło:
-
Acta Physica Polonica A; 2004, 106, 2; 265-272
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł