- Tytuł:
- Electrical Resistivity and Electronic Structure of the $Tb_{x}Gd_{1-x}Ni_3$ System
- Autorzy:
-
Chełkowska, G.
Bajorek, A.
Chrobak, A.
Kwiecień-Grudziecka, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1427391.pdf
- Data publikacji:
- 2012-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.20.Eh
71.20.Lp
72.15.-v
72.10.Di
79.60.-i - Opis:
- In the paper the electric properties and electronic structure of the intermetallic $Tb_{x}Gd_{1-x}Ni_3$ compounds are presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature $(T_{C})$ and the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in ρ(T) have been analyzed. Moreover, the reduced form of the electrical resistivity $ρ_{Z} (T - T_{0})$ indicates a deviation from the linearity for x > 0.2. This kind of behaviour can be attributed to density of d states near by the Fermi level $(E_{F})$ which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the influence of Tb/Gd substitution on the electronic structure.
- Źródło:
-
Acta Physica Polonica A; 2012, 121, 5-6; 1139-1141
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki