- Tytuł:
- A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors
- Autorzy:
-
Pietrzyk, M.
Kowalski, B.
Orlowski, B.
Knoff, W.
Story, T.
Dobrowolski, W.
Slynko, V.
Slynko, E.
Johnson, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1538868.pdf
- Data publikacji:
- 2010-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
79.60.-i
71.20.Mq
71.20.Be - Opis:
- In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
- Źródło:
-
Acta Physica Polonica A; 2010, 117, 2; 293-295
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł