- Tytuł:
- Substrate Temperature Influenced Structural and Electrical Behaviour of~RF Magnetron Sputtered $Ag_2Cu_2O_3$ Films
- Autorzy:
-
Sreedhar, A.
Hari Prasad Reddy, M.
Uthanna, S.
Martins, R.
Elangovan, E.
Pierson, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1492600.pdf
- Data publikacji:
- 2011-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.20.-b
71.15.Mb
78.20.Ci
74.25.Gz - Opis:
- $Ag_2Cu_2O_3$ films were deposited on glass and silicon substrates by RF magnetron sputtering of metallic equimolar $(Ag_{50}Cu_{50})$ alloy target in $Ar-O_{2}$ mixture at different substrate temperature $(T_{s})$ ranging between 303 and 523 K. The effect of $T_{s}$ on the core level binding energies, structural and electrical properties of the films was systematically studied. The films deposited at room temperature were amorphous. The films deposited at 373 K were polycrystalline and the crystallinity was increased when the $T_{s}$ was increased to 423 K. The films deposited at 423 K and subsequently annealed at 498 K exhibits single phase $Ag_2Cu_2O_3$. In the case of films deposited at higher $T_{s}$ of 523 K, $Ag_2O$ was decomposed into Ag. The electrical resistivity of the films deposited at 303 K was $1.2 \times 10^{-5}$ Ω cm, whereas the films formed at 423 K and subsequently annealed at 498 K showed electrical resistivity of $2.2 \times 10^{-3}$ Ω cm due to improvement in the crystallinity of single phase $Ag_2Cu_2O_3$.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 6A; A-037-A-039
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł