- Tytuł:
- Electronic Band Structure of In$\text{}_{x}$Ga$\text{}_{1-x}$N under Pressure
- Autorzy:
-
Gorczyca, I.
Christensen, N. E.
Svane, A.
Laaksonen, K.
Nieminen, R. M. - Powiązania:
- https://bibliotekanauki.pl/articles/2047377.pdf
- Data publikacji:
- 2007-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.15.Mb
71.55.Eq
71.20.-b - Opis:
- The electronic band structures of zinc-blende In$\text{}_{x}$Ga$\text{}_{1-x}$N alloys with x varying from 0.03 to 0.5 are examined within the density functional theory. The calculations, including structural optimizations, are performed by means of the full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of varying the composition, x, and of applying external pressure are studied. A composition-dependent band gap bowing parameter in the range of 1.6-2 eV is obtained. A strong nonlinearity in the composition dependence of the pressure coefficient of the band gap is found.
- Źródło:
-
Acta Physica Polonica A; 2007, 112, 2; 203-208
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł