- Tytuł:
- Numerical Simulation of Current Dependence on Well Widths in AlGaAs/GaAs/AlGaAs Double Barrier Diode Structures
- Autorzy:
- Rezvani, A. H.
- Powiązania:
- https://bibliotekanauki.pl/articles/2035656.pdf
- Data publikacji:
- 2003-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.63.Hs
71.15.Mb
71.10.Ca - Opis:
- A numerical procedure based on the time-dependent Kohn-Sham equation with an improved boundary condition for the modeling double barrier resonant tunneling diode is presented. The dependence of current components on well widths in AlGaAs/GaAs/AlGaAs structure is studied. An oscillatory behavior was observed as the width of the well is changed. Our evaluation shows that this oscillation cannot attribute to the well-known oscillation at resonance state.
- Źródło:
-
Acta Physica Polonica A; 2003, 103, 1; 47-56
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł