- Tytuł:
- Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
- Autorzy:
-
Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1505529.pdf
- Data publikacji:
- 2011-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.-m
71.35.-y
68.65.-k - Opis:
- We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 2; 177-179
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł