- Tytuł:
- Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
- Autorzy:
-
Borysiewicz, M.
Kamińska, E.
Piotrowska, A.
Pasternak, I.
Jakieła, R.
Dynowska, E. - Powiązania:
- https://bibliotekanauki.pl/articles/1811915.pdf
- Data publikacji:
- 2008-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.05.cp
68.49.Sf
68.55.ag
81.40.Ef - Opis:
- Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
- Źródło:
-
Acta Physica Polonica A; 2008, 114, 5; 1061-1066
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł