- Tytuł:
- RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
- Autorzy:
-
Ratajczak, R.
Stonert, A.
Guziewicz, E.
Gierałtowska, S.
Krajewski, T.
Luka, G.
Wachnicki, L.
Witkowski, B.
Godlewski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1400467.pdf
- Data publikacji:
- 2013-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
77.55.hf
81.05.Dz
81.15.Hi
68.55.ag
82.80.Yc
61.85.+p - Opis:
- The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 5; 899-903
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł