- Tytuł:
- Hydrogen and its Complexes in Silicon
- Autorzy:
-
Dobaczewski, L.
Bonde Nielsen, K.
Gosciński, K.
Andersen, O. - Powiązania:
- https://bibliotekanauki.pl/articles/2014151.pdf
- Data publikacji:
- 2000-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.Lq
71.55.Cn
68.55.Ln - Opis:
- In this study the technique of Laplace transform (high resolution) deep level transient spectroscopy combined with the uniaxial stress method has been used to study a symmetry and the defect reconfiguration kinetics (the stress induced alignment) of some forms of hydrogen-related centres. We have confirmed the trigonal symmetry of the defect related to the isolated bond centred hydrogen. When hydrogen decorates the vacancy-oxygen pair (the A centre) the apparent defect orthorhombic symmetry is not lowered as a result of a very high hydrogen jumping rate between two unsaturated broken bonds of the vacancy. We also show that the stress-induced defect alignment in some cases can be related to the same microscopic mechanism of the hydrogen motion as it is for the diffusion process.
- Źródło:
-
Acta Physica Polonica A; 2000, 98, 3; 231-239
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł