- Tytuł:
- Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods
- Autorzy:
-
Pełka, J. B.
Górecka, J.
Auleytner, J.
Domagała, J.
Bąk-Misiuk, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1964119.pdf
- Data publikacji:
- 1997-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.55.Ln
68.55.Jk - Opis:
- The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10$\text{}^{16}$ I cm$\text{}^{-2}$ of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
- Źródło:
-
Acta Physica Polonica A; 1997, 91, 5; 905-910
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł