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Wyszukujesz frazę "81.15.Aa" wg kryterium: Temat


Wyświetlanie 1-6 z 6
Tytuł:
Study of Structure Densification in $TiO_2$ Coatings Prepared by Magnetron Sputtering under Low Pressure of Oxygen Plasma Discharge
Autorzy:
Domaradzki, J.
Kaczmarek, D.
Prociow, E.
Radzimski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1503889.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
81.15.-z
68.55.-a
81.15.Aa
Opis:
Current work presents results of studies on structural and optical properties of the $TiO_2$ thin films prepared by reactive magnetron sputtering. Oxide thin films were deposited from metallic targets using oxygen gas only instead of usually used mixture of Ar-$O_2$. Additionally, an increased amplitude of unipolar pulses powering the magnetron has been applied. It is shown that all prepared coatings were stoichiometric and by changing only the discharge voltage it is possible to influence the resulting structural phase and optical properties of prepared thin films. Depending on conditions of magnetron powering, $TiO_2$ thin films had either the anatase structure with refraction index n = 2.1 (λ = 500 nm) or a high temperature stable rutile structure with n = 2.52 (λ = 500 nm).
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 49-52
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method
Autorzy:
Wachnicki, Ł.
Witkowski, B.
Gierałtowska, S.
Kopalko, K.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492916.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Bc
82.47.Rs
68.55.-a
81.15.Aa
Opis:
Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 905-907
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Annealed (0001) α-$Al_2O_3$ Surfaces on Heteroepitaxial Growth of Silver Nanoparticles
Autorzy:
Al-Mohammad, A.
Powiązania:
https://bibliotekanauki.pl/articles/1808108.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
81.15.Aa
61.05.jh
61.46.Df
Opis:
The effect of annealed (0001) α -$Al_2O_3$ surfaces on heteroepitaxial growth of silver nanoparticles were analysed by reflection high-energy electron diffraction, transmission electron microscope and selected area electron diffraction. Ag nanoparticles were deposited on 1× 1 stoichiometric and reconstructed (111)Al//(0001) α -$Al_2O_3$ with the Knudsen cell. The maximum cluster density method and the Lifethenz theory of Van der Waals energy were used to investigate the Ag//(0001)α -$Al_2O_3$ interface parameters. The growth modes, lattice parameters, nanoparticle forms and sizes are strongly dependent on the substrate surface structures. Initially, three-dimensional islands of Ag nanoparticles grow on both kinds of surfaces with partial hexagonal shapes. Ag nanoparticles on stoichiometric surface create the (111)Ag//(0001)α -$Al_2O_3$ interface without any preferred epitaxial direction. On this surface, Gaussian distribution is characteristic of an atom-by-atom growth mode with density of Ag nanoparticles lower than saturation density while a coalescence growth mode appears due to binary collisions between Ag nanoparticles accompanied by a liquid-like behaviour after saturation density. In case of reconstruction substrates, the epitaxial relationships between Ag nanoparticles and the surface are formed (111)Ag//(0001)α -$Al_2O_3$, 〈01\bar(1)〉Ag//[12\bar(3)0]α -$Al_2O_3$ or 〈01\bar(1)〉Ag//[1\bar(1)00]α-$Al_2O_3$. The Ag nanoparticles make rotation with angles between ± 6° around the epitaxial orientations 〈1\bar(1)00〉 or 〈12\bar(3)0〉. Only the atom-by-atom growth mode were found at all Ag nanoparticles growth processes.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 679-684
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Ag Film Roughening during Deposition on Quasicrystal and Approximant Surfaces
Autorzy:
Ünal, B.
Evans, J.
Thiel, P.
Powiązania:
https://bibliotekanauki.pl/articles/1373681.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
61.44.Br
68.37.Ef
81.15.Aa
Opis:
The temperature (T) dependence of roughening as assessed by scanning tunneling microscopy is compared for growth of Ag films on an 5-fold icosahedral Al-Pd-Mn quasicrystal surface and on an ξ'-approximant. Growth on the quasicrystal corresponds to a version of the Volmer-Weber growth, but modified by quantum size effects, and also by kinetic smoothening at low T and low coverages (θ). Growth on the approximant corresponds to a version of the Stranski-Krastanov growth modified by kinetic roughening at low T and low θ. For larger θ, i.e., for thicker films, distinct behavior is observed.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 608-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Ca Content on the Structure and Properties οf (Co,Ca)O Thin Films Deposited by PLD Technique
Autorzy:
Cieniek, L.
Kac, S.
Powiązania:
https://bibliotekanauki.pl/articles/1537944.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Fg
81.15.-z
81.15.Aa
68.55.-a
68.60.Bs
68.37.-d
68.55.jd
Opis:
In this paper the results of investigations of pure and Ca-doped CoO thin films deposited by PLD technique are presented. The studies carried out for variable Ca content allowed to establish optimal conditions for good quality oxide films preparation. The microstructure, chemical/phase composition and morphology of obtained thin films were examined by means of diverse techniques (SEM, EDS, XPS and XRD). For estimation of deposited Ca-doped CoO films quality the nanohardness and scratch tests (adhesion) were performed. Obtained results confirm that using PLD technique it is possible to carry stoichiometric composition of (Co,Ca)O from target to single crystal substrate and allow to conclude that the calcium dopant concentration (chemical composition) influence on the morphology and measured properties of deposited (Co,Ca)O films.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 803-807
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films
Autorzy:
Rusu, D.
Rusu, G.
Luca, D.
Powiązania:
https://bibliotekanauki.pl/articles/1505094.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.hf
68.55.-a
68.55.J-
81.15.Aa
78.20.-e
Opis:
Zinc oxide (ZnO) thin films (with thickness ranged from 780 nm to 1150 nm) were prepared by thermal oxidation in air (at 600-700 K, for 20-30 min) of vacuum evaporated metallic zinc films. The Zn films were deposited on glass substrates at room temperature. The crystalline structure of ZnO thin film samples was investigated using X-ray diffraction technique. The diffraction patterns revealed that the ZnO thin films were polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to substrate surface. Some important structural parameters (lattice parameters of the hexagonal cell, crystallite size, Zn-O bond length, residual stress, etc.) of the films were determined. The surface morphology of the prepared ZnO thin films, investigated by atomic force microscopy, revealed a uniform columnar structure. The spectral dependence of transmission coefficient has been studied in the wavelength range from 300 nm to 1700 nm. The optical energy band gap calculated from the absorption spectra (supposing allowed direct band-to-band transitions) are in the range 3.17-3.19 eV. The dependence of the microstructural and optical characteristics on the preparation conditions (oxidation temperature, oxidation time, etc.) of the oxidized zinc films is discussed.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 850-856
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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