- Tytuł:
- DLC Coatings by $PI^{3}D:$ Low-Voltage žersus High-Voltage Biasing
- Autorzy:
-
Ryoo, H.
Nikiforov, S.
Rim, G.
Shenderey, S.
Oh, H.
Chung, S. - Powiązania:
- https://bibliotekanauki.pl/articles/1807961.pdf
- Data publikacji:
- 2009-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
52.77.Dq
68.35.Gy
68.55.-a
78.30.-j - Opis:
- Diamond-like carbon (DLC), in particular hydrogenated amorphous carbon (a-C:H) films have been formed on various conductive and dielectric materials by plasma immersion ion implantation and deposition $(PI^{3}D)$ processing. Effect of pulse voltage and other process parameters on the film properties was investigated. It was found that for conductive substrates, a low-voltage ( ≈1 kV), high repetition rate pulsing provides better overall film performance comparing to that obtained by applying higher voltages, which is also favourable for conformal treatment of 3D workpieces. However, short 1-2 μs, high-voltage 5-20 kV pulses are required for dielectric workpieces several millimeter thick. Good film adhesion was achieved by forming a Si-containing buffer layer using hexamethyldisiloxane (HMDSO) as a precursor and a low-voltage pulsing. Roughness and wettability of DLC coatings was found to be controlled by varying the bias specs and sample temperature. Very smooth films with average roughness less than 1 Å were prepared at optimised process parameters.
- Źródło:
-
Acta Physica Polonica A; 2009, 115, 6; 1146-1148
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł