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    Wyświetlanie 1-3 z 3
    Tytuł:
    Molecular Dynamics Simulations of Energetic Ar Cluster Bombardment of Ag(111)
    Autorzy:
    Palka, G.
    Rzeznik, L.
    Paruch, R.
    Postawa, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400436.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    82.80.Ms
    83.10.Rs
    79.20.Rf
    Opis:
    Large-scale molecular dynamics computer simulations are used to investigate the dynamics of material ejection during high-energy $Ar_n$ cluster bombardment of Ag(111) at normal incidence. The silver sample containing 7 million atoms is bombarded with $Ar_n$ projectiles (n=45-30000) with kinetic energy spanning from a few keV up to 1 MeV. Such a wide range of projectile parameters allows probing processes taking place during low-density collision cascade as well as during high-density events characteristic of micrometeorite bombardment in space. The material modifications and total sputtering yield of ejected particles are investigated. While at low-energy impacts, ejection of individual silver atoms is the main emission channel, the ejection of large clusters from the corona of the created crater dominates for the high-energy impacts.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 831-833
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profile Analysis of Phosphorus Implanted SiC Structures
    Autorzy:
    Konarski, P.
    Król, K.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Turek, M.
    Żuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402214.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    68.55.Ln
    82.80.Ms
    85.40.Ry
    Opis:
    Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 864-866
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sputtering of Benzene Sample by Large Ne, Ar and Kr Clusters - Molecular Dynamics Computer Simulations
    Autorzy:
    Rzeznik, L.
    Paruch, R.
    Garrison, B.
    Postawa, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400433.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    82.80.Ms
    83.10.Rs
    61.82.Pv
    79.20.Rf
    Opis:
    Molecular dynamics simulations are employed to probe the role of an impact angle on emission efficiency of organic molecules sputtered from benzene crystal bombarded by 15 keV $Ne_{2953}$, $Ar_{2953}$, and $Kr_{2953}$ clusters. It is found that both the cluster type and the angle of incidence have significant effect on the emission efficiency. The shape of the impact angle dependence does not resemble the dependence characteristic for medium size clusters ($C_{60}$, $Ar_{366}$), where sputtering yield only moderately increases with the impact angle, has a shallow maximum around 40° and then decreases. On the contrary, for the large projectiles ($Ne_{2953}$, $Ar_{2953}$, and $Kr_{2953}$) the emission efficiency steeply increases with the impact angle, has a pronounced maximum around 55° followed by rapid signal decay. It has been found that the sputtering yield is the most sensitive to the impact angle change for Kr cluster projectiles, while change of the impact angle of Ne projectile has the smallest effect on the efficiency of material ejection.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 825-827
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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