- Tytuł:
- Thermal Desorption Studies of $Ar^{+}$ Implanted Silicon
- Autorzy:
-
Drozdziel, A.
Wojtowicz, A.
Turek, M.
Pyszniak, K.
Maczka, D.
Slowinski, B.
Yushkevich, Y.
Zuk, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1382778.pdf
- Data publikacji:
- 2014-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.43.Vx
61.72.uf - Opis:
- Thermal desorption spectrometry measurements were performed for Ar implanted Si samples. Implantation energy $E_{i}$ varied in the range 85-175 keV. The release of implanted Ar in two steps was observed in the temperature range 930-1300 K: the relatively narrow peak at lower temperature ( ≈ 930 K for implantation fluence 5 × $10^{16}$ $cm^{-2}$) is due to the release of Ar from the agglomerations (bubbles) while the broader peak observed for higher temperatures ( ≈ 950 K for implantation fluence 5 × $10^{16}$ $cm^{-2}$) comes from Ar atoms diffusing out of the sample. Inverse order of peaks is observed compared to the results for lower energy implantations (< 50 keV). Analyzing the thermal desorption spectra collected for different heating ramp rates enabled estimation of the desorption activation energy (2 eV for $E_{i}$ = 85 keV and 1.7 eV for $E_{i}$ = 115 keV).
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 6; 1400-1403
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł