Temat: 68.65.Hb - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs
Autorzy:: Sadowski, J.
Kanski, J.
Adell, M.
Domagała, J. Z.
Janik, E.
Łusakowska, E.
Brucas, R.
Hanson, M.
Powiązania:: https://bibliotekanauki.pl/articles/2044534.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.10.Jt
81.15.Hi
68.65.Hb
68.37.Ps
Opis:: We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 851-858
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Mechanical and Electrical Properties, of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy
Autorzy:: Aleszkiewicz, M.
Fronc, K.
Wróbel, J.
Klepka, M.
Wojtowicz, T.
Karczewski, G.
Powiązania:: https://bibliotekanauki.pl/articles/2047440.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.37.Ef
68.37.Ps
68.65.La
73.21.Hb
78.67.Lt
Opis:: Scanning tunneling spectroscopy was used to check the tunneling I-V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n- and p-type electrical conductivity (i.e. n-ZnO nanowire/n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I-V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 255-260
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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