- Tytuł:
- Defect Structure of High-Temperature-Grown GaMnSb/GaSb
- Autorzy:
-
Romanowski, P.
Bak-Misiuk, J.
Dynowska, E.
Domagala, J.
Sadowski, J.
Wojciechowski, T.
Barcz, A.
Jakiela, R.
Caliebe, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1539009.pdf
- Data publikacji:
- 2010-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.05.cp
68.37.Hk
68.49.Sf
68.55.ag
68.55.Ln - Opis:
- GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of $Ga_{1-x}Mn_{x}Sb$ layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
- Źródło:
-
Acta Physica Polonica A; 2010, 117, 2; 341-343
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł