Autor: Godlewski, D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Light Emission Properties of GaN-Based Laser Diode Structures
Autorzy:: Godlewski, M.
Phillips, M. R.
Czernecki, R.
Targowski, G.
Perlin, P.
Leszczyński, M.
Figge, S.
Hommel, D.
Powiązania:: https://bibliotekanauki.pl/articles/2043715.pdf
Data publikacji:: 2005-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.-z
78.60.Hk
68.37.Hk
Opis:: Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
Źródło:: Acta Physica Polonica A; 2005, 108, 4; 675-680
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
Autorzy:: Godlewski, M.
Ivanov, V. Yu.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2036870.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 689-694
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
Autorzy:: Godlewski, M.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Wisniewski, P.
Suski, T.
Bockowski, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2035593.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 627-632
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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