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Wyszukujesz frazę "Wang, Y.-J." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires
Autorzy:
Bhutto, W.
Wu, Z.
Cao, Y.
Wang, W.
Kang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1361939.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Hj
61.46.Km
64.70.Nd
68.35.Ct
Opis:
ZnO/ZnSe coaxial nanowires with different ZnO core diameters were synthesized by using a two-step chemical vapor deposition. The scanning electron microscopy images demonstrated that the coaxial nanowires with small ZnO core diameter had the smoother surface than that with large ZnO core diameter. A coherent ZnSe layer with wurtzite structure was observed in the nanowire interface between the ZnO core and the ZnSe shell by high resolution transmission electron microscopy. This coherent layer is beneficial to reduce the defect density and improve the crystal quality by suppressing the phase transition. It was found that the coherent thickness was significantly related to the ZnO core diameter. For the nanowire with large ZnO core, a thin critical thickness of 2 - 3 nm was obtained. As a result, a layer of zinc blende ZnSe appeared outside the nanowire, and a lot of defects existed in the interface between the ZnSe layers with different phase structures. For the nanowire with small ZnO core, however, the critical thickness increased and a coherent coaxial structure was observed with the same lattice spacing in the ZnO core and the ZnSe shell. To obtain defect-free coaxial nanowire, an optimal structure was also proposed by theoretical calculation.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 994-996
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
Autorzy:
Wang, H. Y.
Weng, H. M.
Ling, C. C.
Ye, B. J.
Zhou, X. Y.
Han, R. D.
Powiązania:
https://bibliotekanauki.pl/articles/2043365.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
68.35.Ct
73.40.Sx
Opis:
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 874-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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