Temat: 78.70.Ck - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Nonlinear Diffusion in Excited HgCdTe and Si Crystals
Autorzy:: Janavičius, A. J.
Norgėla, Ž.
Purlys, R.
Powiązania:: https://bibliotekanauki.pl/articles/2036987.pdf
Data publikacji:: 2003-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 66.30.-h
66.30.Hs
78.70.Ck
Opis:: We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.
Źródło:: Acta Physica Polonica A; 2003, 104, 5; 459-467
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Fast Diffusion of Metastable Vacancies in Surface of Excited Si Crystals
Autorzy:: Janavičius, A. J.
Turskienė, S.
Powiązania:: https://bibliotekanauki.pl/articles/2047100.pdf
Data publikacji:: 2006-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 66.30.-h
66.30.Hs
78.70.Ck
Opis:: We considered the practically interesting, very fast nonlinear diffusion of metastable vacancies in the surface of Si crystal, excited by soft X-rays. Here we used experimentally defined diffusion coefficients of singly and doubly negatively charged very fast vacancies generated by soft X-rays. These high concentration (about 10$\text{}^{13}$ cm$\text{}^{-3}$) metastable vacancies at room temperature can diffuse and exist in the crystal for a very long time (about 24 hours for not so fast neutral vacancies) changing electrical conductivity, the Hall mobility of carriers and generating some resonance phenomena in the lattice of Si crystal. We measured superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, where X-rays did not acted. In the paper we modified the formerly obtained analytical solution of nonlinear diffusion equation for calculation of distribution of vacancies in two-dimensional surface.
Źródło:: Acta Physica Polonica A; 2006, 110, 4; 505-510
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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