- Tytuł:
- Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
- Autorzy:
-
Bąk-Misiuk, J.
Domagała, J.
Trela, J.
Leszczyński, M.
Misiuk, A.
Härtwig, J.
Prieur, E. - Powiązania:
- https://bibliotekanauki.pl/articles/1945264.pdf
- Data publikacji:
- 1996-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.40.-z
65.70.+y - Opis:
- AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
- Źródło:
-
Acta Physica Polonica A; 1996, 89, 3; 405-409
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł