- Tytuł:
- Polarity Related Problems in Growth of GaN Homoepitaxial Layers
- Autorzy:
-
Leszczyński, M.
Prystawko, P.
Śliwinski, A.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Paszkiewicz, R.
Tłaczała, M.
Beaumont, B.
Gibart, P.
Barski, A.
Langer, R.
Knap, W.
Frayssinet, E. - Powiązania:
- https://bibliotekanauki.pl/articles/1991873.pdf
- Data publikacji:
- 1998-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Vv
65.70.+y - Opis:
- Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
- Źródło:
-
Acta Physica Polonica A; 1998, 94, 3; 427-430
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł