- Tytuł:
- Te Shallow Donor Solubility Mechanism in GaAs
- Autorzy:
-
Słupiński, T.
Zielińska-Rohozińska, E.
Harasimowicz, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1952703.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
64.75.+g
72.80.Ey - Opis:
- Results of thermal annealing of extremely highly doped GaAs:Te on room temperature Hall electron concentration and diffuse X-ray scattering are briefly reported. Reversible decrease/increase in electron concentration vs. temperature of annealing perfectly coincides with a strong increase/decrease in diffuse X-ray scattering intensity. An analysis of X-ray results indicates an arising of correlations in impurity positions in crystal lattice points in GaAs:Te solid solution for very high doping level. We give a sketch of a new formal model of tight bond creation between impurity atoms, which can consistently describe our results. The model is free from difficulties in describing annealing results encountered by a widely spread model of charge compensation by native acceptors.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 1080-1084
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł