Autor: Degoda, V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Kinetics of Charge Transport in Wide-Band Semiconductors at the Detection of X-Ray Radiation
Autorzy:: Degoda, V.
Sofienko, A.
Powiązania:: https://bibliotekanauki.pl/articles/1550473.pdf
Data publikacji:: 2010-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 64.70.kg
68.55.ag
07.77.Ka
Opis:: As a result of absorption of X-ray quantum in a semiconductor, the generation of electron-hole pairs takes place in a small volume (diameter < 0.5 μm). Their surplus energy is lost due to the scattering on phonons of the crystal lattice. Spatial distribution of the charge carriers makes the form of current pulse on electrodes of the crystal complicated when an external electric field is applied. We present a logical chart of construction of basic kinetic model of X-ray conductivity (XRC) in semiconductors that uses the successive in time calculation of the spatial distribution of free charge carriers and the diffusive-drift model of motion of free carriers in a solid. The basic form of current pulse in an external circle was obtained in the analytical kind for the case of an ideal semiconductor, e.g. that does not contain deep traps and recombination centers, as well as for the case of a crystal with dominant shallow or deep traps of electrons and holes.
Źródło:: Acta Physica Polonica A; 2010, 117, 1; 155-160
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Oscillatory regularity of charge carrier trap energy spectra in ZnSe single crystals
Autorzy:: Degoda, V.
Gumenjuk, A.
Pavlova, N.
Sofiienko, A.
Sulima, S.
Powiązania:: https://bibliotekanauki.pl/articles/1075346.pdf
Data publikacji:: 2016-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 64.70.kg
68.55.ag
07.77.Ka
Opis:: This article presents the results of an experimental investigation of the energy spectra of charge carrier traps in undoped high-resistivity ZnSe single crystals. Fourteen peaks were found in the thermostimulated luminescence spectra of the ZnSe samples at temperatures between 8 K and 450 K, and the thermal activation energies of the charge carrier traps were estimated for the most intense peaks. It was found that the energy spectra of the charge carrier traps in ZnSe exhibit oscillatory regularity, and the energy of a vibrational quantum was estimated to be ħω = 206 cm¯¹, which is in good agreement with the vibrational mode in the Raman spectrum. Additionally, a linear relationship was observed between the thermal activation energies of the charge carrier traps and the temperature positions of the maxima in the thermostimulated luminescence of ZnSe.
Źródło:: Acta Physica Polonica A; 2016, 129, 3; 304-309
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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