- Tytuł:
- Admittance and Permittivity in Doped Layered $TlGaSe_2$ Single Crystals
- Autorzy:
-
Dawood, S.
Fedotov, A.
Mammadov, T.
Zukowski, P.
Koltunowicz, T.
Saad, A.
Drozdov, N. - Powiązania:
- https://bibliotekanauki.pl/articles/1365735.pdf
- Data publikacji:
- 2014-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.Ey
84.37.+q
64.70.Nd - Opis:
- In doped $TlGaSe_2$ crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations $N_\text{imp}$ < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with $N_\text{imp}$ > 0.5 at.% resulted in full suppression of this phase transition presence.
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 6; 1267-1270
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł