Autor: Zytkiewicz, Z. R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: New Local Vibrational Modes Related to Silicon in Bulk AlGaAs
Autorzy:: Kaczor, P.
Żytkiewicz, Z. R.
Dobaczewski, L.
Powiązania:: https://bibliotekanauki.pl/articles/1933798.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 63.20.Pw
61.72.Vv
71.55.Eq
Opis:: A silicon-related local vibrational mode absorption in AlGaAs is reported for the first time. It consists of six peaks grouped around 450 cm$\text{}^{-1}$ which form a distinct pattern. We believe that the new local vibrational mode absorption is a fingerprint of a single defect. Among the discussed microscopic structures the most plausible is a Si$\text{}_{Ga}$-Si$\text{}_{As}$ pair complex with Si$\text{}_{As}$ acceptor interacting with different Ga, Al nearest neighbour local environments.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 759-762
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy
Autorzy:: Kaczor, P.
Ashwin, M. J.
Dobosz, D.
Żytkiewicz, Z. R.
Newman, R. C.
Dobaczewski, L.
Powiązania:: https://bibliotekanauki.pl/articles/1951990.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Fs
63.20.Pw
61.72.-y
Opis:: Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si$\text{}_{Ga}$ donors, Si$\text{}_{As}$ acceptors and Si$\text{}_{Ga}$-Si$\text{}_{As}$ pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm$\text{}^{-1}$ are discussed in relation to possible perturbations of the lines from Si$\text{}_{Ga}$ or Si$\text{}_{As}$. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 865-868
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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